N-Channel Trench MOSFET
MDF4N60B N-channel MOSFET 600V
MDF4N60B
N-Channel MOSFET 600V, 4.6A, 2.0Ω
General Description
These N-channel MOSFET a...
Description
MDF4N60B N-channel MOSFET 600V
MDF4N60B
N-Channel MOSFET 600V, 4.6A, 2.0Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 4.6A RDS(ON) ≤ 2.0Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220F MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
...
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