MDP8N60

MDP8N60 N-channel MOSFET 600V MDP8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP8N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.0Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 60...