N-Channel Trench MOSFET
MDIS1501 – Single N-Channel Trench MOSFET 30V
MDIS1501
Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ
General Descri...
Description
MDIS1501 – Single N-Channel Trench MOSFET 30V
MDIS1501
Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ
General Description
The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1501 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD
G DS
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
June. 2011. Version 1.2
1
Symbol VDSS VGSS
...
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