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MDS5601

MagnaChip
Part Number MDS5601
Manufacturer MagnaChip
Description Dual N-Channel Trench MOSFET
Published Apr 10, 2017
Detailed Description MDS5601 – Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ General Description The...
Datasheet PDF File MDS5601 PDF File

MDS5601
MDS5601

Overview
MDS5601 – Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.
9A, 10.
5mΩ General Description The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDS5601 is suitable for DC/DC converter and general purpose applications.
Features à VDS = 30V à ID = 12.
9A @VGS = 10V à RDS(ON) < 10.
5mΩ @VGS = 10V < 16.
1mΩ @VGS = 4.
5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation...


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