MDS5651

MDS5651– Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ MDS5651 Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ General Description The MDS5651 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 26mΩ @VGS = 10V < 39mΩ @VGS = 4.5V Applications Inverters General purpose applications 6(D2)5(D2) 7(D1) 8(D1) 3(S24) (G2) 2(G1) 1(S1) D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current(1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol ...