MDS1656

MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description The MDS1656 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 30V ID = 7.2A @VGS = 10V RDS(ON) < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Applications Inverters General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Re...