N-Channel Trench MOSFET
MDD1851– N-Channel Trench MOSFET 45V, 50A, 9.0mΩ
MDD1851
N-Channel Trench MOSFET 45V, 50A, 9.0mΩ
General Description
T...
Description
MDD1851– N-Channel Trench MOSFET 45V, 50A, 9.0mΩ
MDD1851
N-Channel Trench MOSFET 45V, 50A, 9.0mΩ
General Description
The MDD1851 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 45V ID = 50A @VGS = 10V RDS(ON) < 9.0mΩ @ VGS = 10V < 11.5mΩ @ VGS = 4.5V
Applications
Inverters General purpose applications
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy Junction and Storage Temperature Range
TC=25oC TA=25oC
(a) (b)
TC=25oC TA=25oC
(Note 3)
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Ju...
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