Single N-channel Trench MOSFET
MDIS1903 – Single N-Channel Trench MOSFET 100V
MDIS1903
Single N-channel Trench MOSFET 100V, 12.8A, 105mΩ
ㄹ
General De...
Description
MDIS1903 – Single N-Channel Trench MOSFET 100V
MDIS1903
Single N-channel Trench MOSFET 100V, 12.8A, 105mΩ
ㄹ
General Description
The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1903 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 100V ID = 12.8A @VGS = 10V RDS(ON) (MAX)
< 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V
D
GDS
G S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC
TC=25oC TC=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating 100 ±20 12.8 10.3 40 36.8 23.6 21
-55~150
Un...
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