MMIS70R900P

MMIS70R900P Datasheet MMIS70R900P 700V 0.9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.9 3 5 15 Unit V Ω V A nC G DS D G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMIS70R900PTH 70R900P Temp. Range -55 ~ 150℃ Jan. 2021 Revision 1.4 1d Package TO-251-VS (IPAK-VS) Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd. MMIS70R900P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) VDSS VGSS ID IDM 700 ±30 5 3 15 V V A TC=25℃ A TC=100℃ A Power dissipation Single - pulse avalanche energy PD 40 W EAS 50 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature Ma...