CEM2182

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 9.3 IDM 37.2 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.July http://www.cetsemi.com CEM2182 Electrical Characteristics TA = 25 C unless o...