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CEP140N10

CET
Part Number CEP140N10
Manufacturer CET
Description N-Channel MOSFET
Published Apr 10, 2017
Detailed Description CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V....
Datasheet PDF File CEP140N10 PDF File

CEP140N10
CEP140N10

Overview
CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.
5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±20 Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a ID IDM 137 87 548 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 208 1.
7 Single Pulsed Av...


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