CEM3109
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 10A, RDS(ON) = 14mΩ ...
CEM3109
Dual Enhancement Mode Field Effect
Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
-30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. Surface mount Package.
SO-8
1
D1 D1 D2 D2 876 5
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 10 IDM 40
Channel 2 -30
±20
-8 32
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units C/W
This is preliminary information on a new product in development now . Details are subject to change...
