C2M0280120D

VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications LED Lighting Power Supplies High Voltage DC/DC Converters Industrial Power Supplies HVAC Part Number C2M0280120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed Drain Current PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque 1200 -10/+25 -5/+20 11 7.5 V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS = 20 V, TC = 25 °C A VGS = 20 V, TC = 100 °C 20 A Pulse width tP limited by Tjmax 69.4 -55 to +150 260 1 8.8 W TC=25 °C, TJ = 150 °C ˚C ˚C 1.6 mm (0.063”) from case for 10s Nm lbf-in M3 or 6-32 screw Note Fig. 19 Fig. 22 Fig. 20 1 C2M0280120D Rev. 3, 02-2021 Electrical Characteristics (TC = 25˚C unless otherwise speci...