Document
07 Dual N-Channel Power MOSFET
MOS-TECH Semiconductor Co.,LTD
D
07
Dual N-Channel Power026)(7
Features
! 7.1A, 20V rDS(ON) =0.0Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V
! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low
rDS(ON) ! Low profile TSSOP-8 package
Applications
! Load switch ! Battery charge ! Battery disconnect circuits
General Description
This N-ChannelMOSFETisproducedusing0267(&+ Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
G2 S2 S2 D2
TSSOP-8 Pin 1
G1
S1 S1 D1
D1 D2
G1 G2 S1 S2
©20 0267(&+ Semiconductor Corporation 07 Rev. A
1
www.PWsemi.com
07 Dual N-Channel Power MOSFET
Absolute Maximum Ratings TA=25°C unle.