Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect Transistor
MT6401
FEATURES
● Super high dense...
Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect
Transistor
MT6401
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-28V - 5.6A
45@ VGS=-10V 55 @ VGS=-4.5V
NOTE:The MT6401 is available in a lead-free package
D
S G
G
S D
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter Sym
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
bol
VDS
VGS ID
Limit
-28
±20 -5.6
- Pulse d b
IDM -25
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
-1.5 1.5
-55 to 150
Unit
V V A
A
A W
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª Rth
JA
90 ℃/W
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