MT4409

MOS-TECH Semiconductor Co.,LTD 07 P-Channel Power0OSFET -30V, -13A, mΩ General Description Features This P-Channel MOSFET is producted using0RVWHFK Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = mΩ at VGS = -10V, ID = -13A „ Max rDS(on) = 1mΩ at VGS = -4.5V, ID = -11A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handing capability „ RoHS Compliant DD D D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Sing...