SQD50N10-8m9L

www.vishay.com SQD50N10-8m9L Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-252 100 0.0089 0.0112 50 Single FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Drain Connected to Tab GDS Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G N-Channel MOSFET S TO-252 SQD50N10-8m9L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C ...