SIHF30N60E

www.vishay.com SiHF30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - LED lighting Industrial - Welding - Induction heating - Motor drives Battery chargers Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free TO-220 FULLPAK SiHF30N60E-GE3 SiHF30N60E-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) d Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt e VDS = 0 V to 80 % VDS Soldering Recommendations (Peak temperature) c for ...