SIHA25N60EFL

www.vishay.com SiHA25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single 0.127 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES Reduced figure-of-merit (FOM): Ron x Qg Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Increased robustness due to low Qrr Low input capacitance (Ciss) Reduced switching and conduction losses Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Computing - ATX power supplies Industrial - Welding - Induction heating - Battery chargers - Uninterruptible power supplies (UPS) Renewable energy - String PV inverters Thin-Lead TO-220 FULLPAK SiHA25N60EFL-E3 SiHA25N60EFL-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c VGS at...