RB558VA150

RB558VA150 Data Sheet Schottky Barrier Diode RB558VA150 lApplications General rectification lFeatures 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified lConstruction Silicon epitaxial lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 TUMD2 lStructure 0.8±0.05 ROHM : TUMD2 Manufacture Date 0.6±0.2 　　　 0.1 lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ 1.0±0.2 　　　　　0 0.9±0.08 lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) VRM VR Average rectified forward current (*1) Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on epoxi board. 180°Half sine wave lElectrical Characteristics(Ta=25°C) Parameter Forward voltag...