Schottky Barrier Diode
RB238NS-30
Data Sheet
lApplications Switching power supply
lFeatures 1) Cathode common dual typ...
Schottky Barrier Diode
RB238NS-30
Data Sheet
lApplications Switching power supply
lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR
lDimensions (Unit : mm)
(2)
RB238 NS30
1
(1) (3)
3.5 2.5 8.5
16
lLand size figure (Unit : mm)
11
9.9 2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83 ①1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
35 V
Reverse voltage Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR Io IFSM Tj
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=90ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
-
30 V 40 A 100 A 150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal C...
