RB228T150NZ

Schottky Barrier Diode RB228T150NZ Application Switching power supply Dimensions (Unit : mm) Datasheet Structure Features 1) Cathode common type 2) High reliability 3) Super low IR (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture Date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.5 150 V Reverse Voltage VR Direct Reverse Voltage 150 V Average Forward Rectified Current Io Glass epoxy board mounted, 60Hz half sin wave, resistive load, IO/2 per diode,Tc=100ºC Max. 30 A Non-repetitive Forward Current Surge Peak IFSM 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode 100 A Operating Junction Temperature Tj - 150 °C Storage Temperature Tstg - 55 to 150 °C Electrical and Thermal Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward Voltage Reverse Current Thermal Resistance VF IR Rth(j-c) IF=15A VR=150V Junction to case - - 0.88 V - - 25 A - - 2 °C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2017.07 - Rev.B RB228T150NZ Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 Tj = 150°C 10 Tj = 125°C Tj = 75°C 1 0.1 Tj = 25°C 0.01 Tj = 25°C 0.001 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(A) 1...