Schottky Barrier Diode
RB095T-60NZ
lApplication Switching power supply
lDimensions (Unit : mm)
lFeatures 1) Cathode c...
Schottky Barrier Diode
RB095T-60NZ
lApplication Switching power supply
lDimensions (Unit : mm)
lFeatures 1) Cathode common type.
(TO-220)
2) Low IR 3) High reliability
lConstruction Silicon epitaxial planar
ROHM : TO220FN 1 Manufacture Date
lPackage Dimensions (Unit : mm)
7 540
Data Sheet lStructure
(1) (2) (3)
34.5
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
60 60 6
Forward current surge peak (60Hz/1cyc) Junction temperature
IFSM Tj
100 150
Storage temperature
Tstg
-40 to +150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130°C
Unit V V A A °C °C
lElectrical characteristics (Ta= 25°C) Parameter
Forward voltage Reverse current Thermal impedance
Symbol Min. VF IR qjc -
Typ. Max. - 0.58 - 300 - 3.0
Unit Conditions V IF=3A mA VR=60V
°C/W junction to case
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