Document
Schottky Barrier Diode
RB088T-40NZ
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR
lConstruction Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31
f3.2±0.2
2.8±00..21
lStructure
15.0±00..24
12.0±0.2
5.0±0.2
8.0±0.2
14.0±0.5
1
1.2 1.3 0.8
2.6±0.5
2.45±0.5 2.45±0.5
(1) (2) (3)
0.75±00..015
ROHM : TO220FN 1 : Manufacture date
(1) (2) (3) Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7 540
34.5
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
45 V
Reverse voltage Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR Io IFSM Tj
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=130ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
-
40 V 10 A 50 A 150 °C
Stora.