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RB088T150 Dataheets PDF



Part Number RB088T150
Manufacturers ROHM
Logo ROHM
Description Schottky Barrier Diode
Datasheet RB088T150 DatasheetRB088T150 Datasheet (PDF)

5.0±0.2NotNeRewcDoemsimgennsded 8.0±0.2for 12.0±0.2 13.5MIN 15.0±0.4   0.2 8.0 Schottky Barrier Diode RB088T150 Datasheet Application Switching power supply Features 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type) Construction Silicon epitaxial planar External dimensions (Unit : mm) 10.0±0.3     0.1 4.5±0.3     0.1 2.8±0.2     0.1 1 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 0.07.75±0.1 0.05 2.6±0.5 Structure (2) (1) (3) (1) Anode (2) Cat.

  RB088T150   RB088T150



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5.0±0.2NotNeRewcDoemsimgennsded 8.0±0.2for 12.0±0.2 13.5MIN 15.0±0.4   0.2 8.0 Schottky Barrier Diode RB088T150 Datasheet Application Switching power supply Features 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type) Construction Silicon epitaxial planar External dimensions (Unit : mm) 10.0±0.3     0.1 4.5±0.3     0.1 2.8±0.2     0.1 1 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 0.07.75±0.1 0.05 2.6±0.5 Structure (2) (1) (3) (1) Anode (2) Cathode (3) Anode ROHM : TO220FN 1 Manufacture Date Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 150 150 10 Forward current surge peak (60Hz・1cyc)(*2) Junction temperature IFSM Tj 50 150 Storage temperature Tstg 55 to 150 (*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave (*2) Per Diode. Unit V V.


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