Type
!"#$%!&™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters...
Type
!"#$%!&™3 Power-
Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Type
IPP080N03L G
IPB080N03L G
Product Summary V DS R DS(on),max ID
IPP080N03L G IPB080N03L G
30 V 8.0 mW 50 A
Package Marking
PG-TO220-3-1 080N03L
PG-TO263-3 080N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22
I D,pulse I AS E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
T C=25 °C
T C=25 °C...
