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K2737

2SK2737

Description

2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 10 mΩ typ. 4V gate drive devices. High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source...

Hitachi Semiconductor

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