DMN2008LFU

Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25°C 14.5A 13.5A 13.0A 12.0A 10.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Power Management Functions  Battery Pack  Load Switch DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: U-DFN2030-6 (Type B)  Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Termina...