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DMN10H170SVTQ

Diodes

100V N-CHANNEL MOSFET


Description
ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applicati...



Diodes

DMN10H170SVTQ

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