DMG4932LSD

DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency Low On-Resistance Low Input Capacitance Fast Switching Speed Utilizes Diodes’ Monolithic DIOFET Technology to Increase Conversion Efficiency 100% UIS and Rg Tested Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.072 grams (approximate) NEW PRODUCT Diodes Schottky Integrated MOSFET D2 D2 G1 S1 G2 S2/D1 S2/D1 S2/D1 Top View Top View Internal Schematic Q1 D1 Q2 D2 G1 G2 S1...