x8 I/O and 3 V VCC NAND Flash Memory
S34ML08G2
8 Gb, 4-bit ECC, x8 I/O and 3 V VCC NAND Flash Memory for Embedded
Distinctive Characteristics
Density – 8 ...
Description
S34ML08G2
8 Gb, 4-bit ECC, x8 I/O and 3 V VCC NAND Flash Memory for Embedded
Distinctive Characteristics
Density – 8 Gb (4 Gb x 2)
Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte
NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed
Supply Voltage – 3.3V device: Vcc = 2.7V ~ 3.6V
Performance
Page Read / Program – Random access: 30 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 300 µs (Typ)
Block Erase / Multiplane Erase – Block Erase time: 3.5 ms (Typ)
Security – One Time Programmable (OTP) area – Serial number (unique ID) – Hardware program/erase disabled during power transition
Additional Features...
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