S29XS064R

S29VS064R S29XS064R 64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst, MirrorBit® Flash Distinctive Characteristics  Single 1.8 volt read, program and erase (1.7 to 1.95 volt)  VersatileIO™ Feature – Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VCCQ pin – 1.8 V compatible I/O signals  Address and Data Interface Options – Address and Data Multiplexed for reduced I/O count (ADM) S29VS-R – Address-High, Address-Low, Data Multiplexed for minimum I/O count (AADM) S29XS-R  Simultaneous Read/Write operation – Data can be continuously read from one bank while executing erase/program functions in other bank – Zero latency between read and write operations  Burst length – Continuous linear burst – 8/16 word linear burst with wrap around  Secured Silicon Sector region – 256 words accessible through a command sequence, 128 words for the Factory Secured Silicon Sector and 128 words for the Customer...