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S29GL064S

Cypress Semiconductor

64 Mbit (8 Mbyte) 3.0 V Flash Memory

S29GL064S 64 Mbit (8 Mbyte) 3.0 V Flash Memory Distinctive Characteristics  CMOS 3.0 Volt Core with Versatile I/O Arch...


Cypress Semiconductor

S29GL064S

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Description
S29GL064S 64 Mbit (8 Mbyte) 3.0 V Flash Memory Distinctive Characteristics  CMOS 3.0 Volt Core with Versatile I/O Architectural Advantages  Single Power Supply Operation  Manufactured on 65 nm MirrorBit Process Technology  Secure SiliconRegion – 128-word / 256-byte sector for permanent, secure identification through an 8-word / 16-byte random Electronic Serial Number, accessible through a command sequence – Programmed and locked at the factory or by the customer  Flexible Sector Architecture – 64 Mb (uniform sector models): One hundred twenty-eight 32kword (64-kB) sectors – 64 Mb (boot sector models): One hundred twenty-seven 32-kword (64-kB) sectors + eight 4kword (8kB) boot sectors  Automatic Error Checking and Correction (ECC) - internal hardware ECC with single bit error correction  Enhanced VersatileI/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ...




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