Simultaneous Read/Write Flash
S29WS512P S29WS256P S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash
Features
Sing...
Description
S29WS512P S29WS256P S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash
Features
Single 1.8 V read/program/erase (1.70–1.95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra page
access time 32 Word / 64 Byte Write Buffer Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively Four 16 Kword sectors at both top and bottom of memory array 510/254/126 64Kword sectors (WS512/256/128P) Programmable linear (8/16/32) with or without wrap around and
continuous burst read modes Secured Silicon Sector region consisting of 128 words each for
factory and 128 words for customer 20-year data retention (typical) Cycling Endurance: 100,000 cycles per sector (typical) Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors Dual boot sector con...
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