MSN0880H
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and un...
