MSN0880K
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V
● Special process technology for high ESD capability ● Special designed for convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with...
