MSN0790K
70V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V
(Typ:5.9mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for g...
