FQD4N60

FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 4A < 2.3Ω TO252 DPAK Top View Bottom View DD Top View TO251A IPAK Bottom View TO251 Top View Bottom View D S G G S S D G G D S S D G AOD4N60 AOI4N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy ...