P-Channel Enhancement Mode Field Effect Transistor
Description
Si2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
80@ VGS=-4.5V 100 @ VGS=-2.5V
NOTE The Si2307is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Paramete...
