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MT6L58AT Dataheets PDF



Part Number MT6L58AT
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet MT6L58AT DatasheetMT6L58AT Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Mounted Devices Three-pins (SSM/TESM) mold products are corresponded. Q1: SSM (TESM) MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS (MT3S03AT) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base cu.

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Mounted Devices Three-pins (SSM/TESM) mold products are corresponded. Q1: SSM (TESM) MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS (MT3S03AT) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Marking Q1 Q2 10 10 55 1.5 2 15 40 7 10 150 125 −55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2JA1C Weight: 0.0045 g (typ.) Pin Assignment (top view) 1 2003-09-19 MT6L58AT Electrical Characteristics Q1 (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gai.


PVX006A0X43-SRZ MT6L58AT CD4067B


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