Document
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AT
MT6L58AT
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6
Mounted Devices
Three-pins (SSM/TESM) mold products are corresponded.
Q1: SSM (TESM)
MT3S06S (MT3S06T)
Q2: SSM (TESM)
MT3S03AS (MT3S03AT)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Marking
Q1 Q2
10 10 55 1.5 2 15 40 7 10
150 125 −55~125
Unit
V V V mA mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-2JA1C
Weight: 0.0045 g (typ.)
Pin Assignment (top view)
1 2003-09-19
MT6L58AT
Electrical Characteristics Q1 (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gai.