SMSD602-RT1G

MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO Collector−Emitter Voltage V(BR)CEO Emitter−Base Voltage V(BR)EBO Collector Current − Continuous IC Collector Current − Peak IC(P) THERMAL CHARACTERISTICS 60 50 7.0 500 1.0 Vdc Vdc Vdc mAdc Adc Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg − 55 ~ +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If...