MOSFET
Main Product Characteristics:
VDSS
900V
RDS(on) 1.2Ω (typ.)
ID 9A Features and Bene...
Description
Main Product Characteristics:
VDSS
900V
RDS(on) 1.2Ω (typ.)
ID 9A Features and Benefits:
TO-247
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature ESD Rating(HBM) :4KV
SSF9N90ZH
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V...
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