MOSFET
Main Product Characteristics:
NMOS
PMOS
VDSS
40V
-40V
RDS(on) 16mohm(typ.) 25moh...
Description
Main Product Characteristics:
NMOS
PMOS
VDSS
40V
-40V
RDS(on) 16mohm(typ.) 25mohm(typ.)
ID 6A
-4.5A
SOP-8 Bottom View
Features and Benefits:
Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications Ultra low on-resistance with low gate charge 150℃ operating temperature
SSF4032CH3
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V① Continuous ...
Similar Datasheet
- SSF4032CH3 MOSFET - Silikron Semiconductor