Document
CYStech Electronics Corp.
Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTBH0N25L3
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package
BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A
250V
1.2A 722mΩ (typ.) 732mΩ (typ.)
Equivalent Circuit
MTBH0N25L3
G:Gate D:Drain S:Source
Outline
SOT-223
D
S D G
Ordering Information
Device MTBH0N25L3-0-T3-G
Package
SOT-223 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25L3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source V.