TC55B465P-12

TOSHIBA 1l:55~65P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly. Features Pin Connection (Top View) Fast access time - TC55B465P/J-10 10ns (max.) - TC55B465P/J-12 12ns (max.) Low power dissipation - Operation: - TC55B465P/J-10 140mA (max.) - TC55B465P/J-12 140mA (max.) - Standby: 15mA (m...