SILICON GATE CMOS STATIC RAM
TOSHIBA
1l:55~64P/J-I0/12
SILICON GATE BiCMOS
65,536 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B464P/J is a...
Description
TOSHIBA
1l:55~64P/J-I0/12
SILICON GATE BiCMOS
65,536 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.
Features
Fast access time - TC55B464P/J-10 10ns (max.) - TC55B464P/J-12 12ns (max.)
Low power dissipation
- Operation:
- TC55B464P/J-10 140mA (max.)
- TC55B464P/J-12 140mA (max.)
- Standby:
15mA (max.)
Single 5V power supply: 5V±10%
Fully static operation
Inputs and o...
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