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TC55257BFL-10LT Dataheets PDF



Part Number TC55257BFL-10LT
Manufacturers Toshiba
Logo Toshiba
Description SILICON GATE CMOS STATIC RAM
Datasheet TC55257BFL-10LT DatasheetTC55257BFL-10LT Datasheet (PDF)

TOSHIBA SILICON GATE CMOS TC55257BPL/BFL/BSPL/BFIL/BTRL-85/10(Ln 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the s.

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TOSHIBA SILICON GATE CMOS TC55257BPL/BFL/BSPL/BFIL/BTRL-85/10(Ln 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2~ at room temperature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required. The TC55257BPL-(LT) has an operating temperature range of -20 - 7CfC so it is suitable for use in low temperature applications. The TC55257BPL is offered in a s.


TC55257BFL-85LT TC55257BFL-10LT TC55257BSPL-85LT


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