4-Bit Separate I/O CMOS SRAM
TOSHIBA
112554101]-20/25/30
SILICON GATE CMOS
1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM
PRELIMINARY
Descri...
Description
TOSHIBA
112554101]-20/25/30
SILICON GATE CMOS
1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM
PRELIMINARY
Description
The TC5541 01 J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable hi~peed operation.
The TC5541 01 J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access.
The TC5541 01 J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TTL compatible.
The TC5541 01 J is available in a 400mil width, 36-pin SOJ suitable for high density surface assembly.
Features
Fast access time - TC5541 01 J -20 20ns (max.) - TC5541 01 J -25 25ns (max.) - TC5541 01 J -30 30ns (max.)
Low power dissipation
- TC5541 01 J -20 160mA (max.)
- TC5541 0...
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