TC551664J-25

TOSHIBA 11:551664]-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls. The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are 11 L compatible. The TC5E)1664,j is available in a 400mil width, 44-pin SOJ suitable for high density surface assembly. Features Fast access time TC551 Gfi4J 1Ei 15ns (max.) - TCb51f3(l!kj -20 20ns (max.) TCb~) 1He'LJ 2b 25ns (max.) ,------- L.ow power dlssipalion - ---~"----- - 1~~~~I~~...