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TC58BVG2S0HBAI6

Part Number	TC58BVG2S0HBAI6
Manufacturer	Toshiba
Description	4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Features	TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Published	Feb 16, 2017
Datasheet	TC58BVG2S0HBAI6 PDF File

Features

TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory...

Similar Datasheet

TC58BVG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM - Toshiba
TC58BVG2S0HBAI6 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM - Toshiba

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